Datasheet.kr   

SGB-6433 데이터시트 PDF




RF Micro Devices에서 제조한 전자 부품 SGB-6433은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 SGB-6433 자료 제공

부품번호 SGB-6433 기능
기능 DC to 3.5GHz ACTIVE BIAS GAIN BLOCK
제조업체 RF Micro Devices
로고 RF Micro Devices 로고


SGB-6433 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

SGB-6433 데이터시트, 핀배열, 회로
SGB-6433(Z)SGB-6433(Z)
DC to 3.5GHz ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 5V supply the SGB-6433 does not require a drop resistor as com-
pared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD
rating, low thermal resistance , and unconditional stability. The SGB-6433 product
is designed for high linearity 5V gain block applications that require small size and
minimal external components. It is on chip matched to 50Ω and an external bias
inductor choke is required for the application band.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
9 SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
NC
NC
RFIN
NC
Active
Bias
NC
NC
RFOUT
NC
Features
„ High Reliability SiGe HBT
Technology
„ Robust Class 1C ESD
„ Simple and Small Size
„ P1dB=18.5dBm at 1950MHz
„ IP3=31dBm at 1950MHz
„ Low Thermal
Resistance = 60 C/W
Applications
„ 5V Applications
„ LO Buffer Amp
„ RF Pre-Driver and RF Receive
Path
Parameter
Specification
Min. Typ.
Small Signal Gain
20.0
14.5
16.0
15.0
Output Power at 1dB Compression
18.5
16.5
18.5
17.5
Output Third Order Intercept Point
33.0
28.5
31.0
31.0
Noise Figure
4.1
Frequency of Operation
DC
Current
76 88
Input Return Loss
12.0
15.0
Output Return Loss
8.5 11.5
Thermal Resistance
60
Test Conditions: Z0=50Ω, VCC=5V, IC=88mA, T=30°C
Max.
17.5
5.1
3500
98
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
mA
dB
dB
°C/W
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
Condition
1950 MHz
1950 MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103095 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8




SGB-6433 pdf, 반도체, 판매, 대치품
SGB-6433(Z)
Evaluation Board Data (VCC=VBIAS=5.0V, IC=88mA) Bias Tee substituted for DC feed inductor (L1) cont
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
0.0
l S11 l vs. Frequency
1.0 2.0 3.0 4.0
Frequency (GHz)
+25c
+85c
-40c
5.0 6.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.0
l S21 l vs. Frequency
1.0 2.0 3.0 4.0
Frequency (GHz)
+25c
+85c
-40c
5.0 6.0
l S12 l vs. Frequency
-18.0
-20.0
-22.0
-24.0
-26.0
+25c
+85c
-40c
-28.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
0.0
l S22 l vs. Frequency
1.0 2.0 3.0 4.0
Frequency (GHz)
+25c
+85c
-40c
5.0 6.0
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103095 Rev H

4페이지










SGB-6433 전자부품, 판매, 대치품
SGB-6433(Z)
Evaluation Board Layout and Bill of Materials
C3
C1
C4
L1
C2
Board material GETEK, 31mil thick, Dk=4.2, 1oz copper
Component Values By Band
Designator
500 MHz
850 MHz
1950 MHz
C3 1000pF
C4* 1uF
1000 pF
1 uF
1000 pF
1 uF
C1, C2
220 pF
68 pF
43 pF
L1 68nH
33 nH
22 nH
*C4 is optional depending on application and filtering. Not required for SGB device operation.
2400 MHz
1000 pF
1 uF
22 pF
18 nH
Note: The amplifier can be run from a 8V supply by simply inserting a 33Ω resistor in series with VCC.
Part Identification
The part will be symbolized with an “SGB6433” for Sn/Pb plating or “SGB64Z” for RoHS green compliant product. Marking
designator will be on the top surface of the package.
Ordering Information
Part Number Reel Size
Devices/Reel
SGB-6433
13”
3000
SGB-6433Z
13”
3000
7 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103095 Rev H

7페이지


구       성 총 8 페이지수
다운로드[ SGB-6433.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
SGB-6433

DC-3.5 GHz Active Bias Gain Block

Sirenza Microdevices
Sirenza Microdevices
SGB-6433

DC to 3.5GHz ACTIVE BIAS GAIN BLOCK

RF Micro Devices
RF Micro Devices

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵