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SGC4363Z 데이터시트 PDF




RF Micro Devices에서 제조한 전자 부품 SGC4363Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 SGC4363Z 기능
기능 high performance SiGe HBT MMIC amplifier
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SGC4363Z 데이터시트, 핀배열, 회로
SGC4363Z
50MHz to
4000 MHz
Active Bias Sili-
con Germa-
nium
Cascadable
Gain Block
SGC4363Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4363Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4363Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss VD = 3V, ID = 54mA
30
S21
20
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10 S22
-20 S11
-30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=12.4dBm at 1950MHz
OIP3=26.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain, (G)
15.6
17.1
18.6
dB 850MHz
11.2
12.7
14.2 dB 1950MHz
11.8
dB 2400MHz
Output Power at 1dB Compression
(P1dB)
11.4
13.3
12.4
dBm
dBm
850 MHz
1950 MHz
11.8
dBm
2400 MHz
Output Third Order Intercept Point
(OIP3)
24.5
28.5
26.5
dBm
dBm
850 MHz
1950 MHz
25.5
dBm
2400 MHz
Input Return Loss, (IRL)
9.5 13.5
dB 1950MHz
Output Return Loss, (ORL)
8.5 12.5
dB 1950MHz
Noise Figure (NF)
4.0 5.0 dB 1930MHz
Thermal Resistance
(Junction - Lead) (Rth, j-l)
180 °C/W
Device Operating Voltage, (VD)
3.0 V
Device Operating Current, (ID)
48.0
54.0
60.0
mA
Test Conditions: VD=3V, ID=54mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL=25°C, ZS=ZL=50, Bias Tee Data
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6




SGC4363Z pdf, 반도체, 판매, 대치품
SGC4363Z
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device pins 1,
2, 4, and 5 with several plated-through holes placed as
shown.
2. 1-2 ounce finished copper thickness is recommended.
3. RF I/O lines are 50Ω
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111011

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부품번호상세설명 및 기능제조사
SGC4363Z

high performance SiGe HBT MMIC amplifier

RF Micro Devices
RF Micro Devices

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