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PDF SGL0163Z Data sheet ( Hoja de datos )
| Número de pieza | SGL0163Z | |
| Descripción | high performance SiGe HBT MMIC amplifier | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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SGL0163Z
100MHz to
1300MHz Sili-
con Germa-
nium
Cascadable
Low Noise
Amplifier
SGL0163Z
100MHz to 1300MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
Package: SOT-363
Product Description
The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier
featuring one-micron emitters with FT up to 50GHz. This device has an
internal temperature compensation circuit permitting operation directly
from supply voltages as low as 2.5V. The SGL0163Z has been character-
ized at VD=3V for low power and 4V for medium power applications. Only
two DC-blocking capacitors, a bias resistor, and an optional RF choke are
required for operation from 800MHz to 1300MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
Temperature
Compensation
Circuit
RF In
VS
RF Out / VS
Features
Internally Matched to 50
800MHz to 1300MHz
High Input/Output Intercept
Low Noise Figure: 1.2dB Typ.
at 900MHz
Low Power Consumption
Single Voltage Supply Opera-
tion
Internal Temperature Com-
pensation
Applications
Receivers, GPS, RFID
Cellular, Fixed Wireless, Land
Mobile
Parameter
Specification (VS=3V)
Min. Typ. Max.
Specification (VS=4V)
Min. Typ. Max.
Small Signal Gain
15.7
16.6
14.0
15.5
17.0
15.8
14.1
15.0
Output Power at 1dB Compres-
sion
4.4
9.9
3.2 5.2
10.1
5.6 10.5
Input Third Order Intercept
Point
5.3 12.1
5.0 7.0
13.4
9.0 14.8
Noise Figure
1.1 1.6
1.2 1.7
1.7
1.2 1.7
Input Return Loss
10.0
12.5
15.7
Output Return Loss
11.5
15.6
17.6
Reverse Isolation
20.9
20.9
Device Current
9.5
12.0
14.0
23
Thermal Resistance
255
Test Conditions: 800MHz to 1300 Application Circuit, TLEAD=25°C, Z0=ZL=50
Unit Condition
dB 800MHz
dB 900MHz
dB 1000MHz
dBm 800MHz
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
900 MHz
1000 MHz
Tone Spacing=1MHz
POUT per tone=-13dBm
800 MHz
900 MHz
1000 MHz
800MHz, ZS=50
900MHz, ZS=50
1000MHz, ZS=50
900 MHz
900 MHz
900 MHz
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 9
1 page  
SGL0163Z
RF Performance - 400-500MHz Series L Application Circuit
Gain vs. Frequency @ TLEAD=+25C
400-500 MHz Series L Application Circuit
24
23
22
21
20
19
18
17 VS=3V, ID=11mA
VS=4V, ID=23mA
16
15
14
400 410 420 430 440 450 460 470 480 490 500
Frequency(MHz)
Gain vs. Frequency @ TLEAD=+25C
400-500 MHz Series L Application Circuit
0
IRL, VS=3V
-4 IRL, VS=4V
ORL, VS=3V
ORL, VS=4V
-8
-12
-16
-20
400 410 420 430 440 450 460 470 480 490 500
Frequency(MHz)
Freq
400 MHz
450 MHz
500 MHz
Freq
400 MHz
450 MHz
500 MHz
VS=3V, ID=11mA (Typ.)
Gain
(dB)
22.0
21.3
20.6
P1dB
(dBm)
4.4
5.0
5.7
IIP3
(dBm)
1.3
3.2
4.1
OIP3
(dBm)
23.1
24.7
24.7
VS=4V, ID=24mA (Typ.)
Gain
(dB)
23.1
22.2
21.2
P1dB
(dBm)
10.9
11.4
12.0
IIP3
(dBm)
6.5
8.1
7.8
OIP3
(dBm)
29.6
30.3
28.9
NF
(dB)
1.1
1.3
1.3
NF
(dB)
2.0
2.1
2.1
RF Performance - 100-800 MHz RC Feedback Application Circuit
Gain vs. Frequency @ TLEAD=+25C
100-800 MHz Feedback Application Circuit
30
Return Loss vs. Frequency @ TLEAD=+25C
100-800 MHz Feedback Application Circuit
0
IRL, VS=3V
28
VS=3V, ID=11mA
-5
VS=4V, ID=23mA
IRL, VS=4V
ORL, VS=3V
26 ORL, VS=4V
-10
24
22 -15
20
18
16
14
100 150 200 250 300 350 400 450 500 550 600 650 700 750 800
Frequency(MHz)
-20
-25
-30
100 150 200 250 300 350 400 450 500 550 600 650 700 750 800
Frequency(MHz)
Freq
100 MHz
300 MHz
500 MHz
800 MHz
Freq
100 MHz
300 MHz
500 MHz
800 MHz
VS=3V, ID=11mA (Typ.)
Gain
(dB)
23.9
21.4
18.7
15.2
P1dB
(dBm)
3.5
3.4
3.5
3.7
IIP3
(dBm)
-6.8
-2.5
0.1
4.3
VS=4V, ID=23mA (Typ.)
Gain
(dB)
26.3
23.0
19.8
16.1
P1dB
(dBm)
9.2
9.8
9.9
10.0
IIP3
(dBm)
-4.1
2.2
5.2
9.7
OIP3
(dBm)
17.1
18.9
18.8
19.5
OIP3
(dBm)
22.2
25.1
25.0
25.8
NF
(dB)
1.4
1.2
1.2
1.2
NF
(dB)
2.2
1.9
1.7
1.7
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SGL0163Z.PDF ] | |
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