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SPA2318Z 데이터시트 PDF




RF Micro Devices에서 제조한 전자 부품 SPA2318Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 SPA2318Z 기능
기능 POWER AMPLIFIER
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SPA2318Z 데이터시트, 핀배열, 회로
SPA2318ZLow
Noise, High
Gain SiGe HBT
SPA2318Z
1700MHz to 2200MHz 1 WATT POWER AMP
WITH ACTIVE BIAS
Package: Exposed Pad SOIC-8
Product Description
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier housed in a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth technology which
produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure
equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an
ideal choice for multi-carrier and digital applications. The matte tin finish on the
lead-free package utilizes a post annealing process to mitigate tin whisker forma-
Optimum Technology
Matching® Applied
GaAs HBT
tion and is RoHS compliant per EU Directive 2002/95. This
package is also manufactured with green molding compounds
that contain no antimony trioxide or halogenated fire retar-
dants.
GaAs MESFET
InGaP HBT
SiGe BiCMOS
VC1
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
VBIAS
RFIN
Active
Bias
RFOUT/
VC2
Si BJT
GaN HEMT
RF MEMS
VPC2
Features
High Linearity Performance:
+21dBm IS-95 Channel
Power at -55dBc ACP;
+20.7dBm WCDMA Channel
Power at -50dBc ACP;
+47dBm Typ. OIP3
On-Chip Active Bias Control
High Gain: 24dB Typ. at
1960 MHz
Patented High Reliability
GaAs HBT Technology
Surface-Mountable Plastic
Package
Applications
WCDMA Systems
PCS Systems
Multi-Carrier Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
1700
2200
MHz
Output Power at 1dB Compression [1]
29.5
dBm
1960 MHz
29.5
dBm
2140 MHz
Adjacent Channel Power [1]
-55.0
-50.0
-47.0
dBc 1960MHz, IS-95 at POUT=21.0dBm, WCDMA at
POUT = 20.7 dBm
dBc 2140MHz
Small Signal Gain [1,2]
24.0
dB 1960MHz
21.0
23.5
24.5 dB 2140MHz
Input VSWR [1,2]
1.6:1
1960 MHz
1.6:1
2140 MHz
Output Third Order Intercept Point [2]
46.5
dBm
1960MHz, Power out per tone=+14dBm
47.0
dBm
2140 MHz
Noise Figure [1,2]
5.5 dB 1960MHz
5.5 dB 2140MHz
Device Current [1,2]
360 400 425 mA IBIAS=10mA, IC1=70mA, IC2=320mA
Device Voltage [1,2]
4.75
5.0
5.25
V
Thermal Resistance
(Junction - Lead)
31
°C/W
TL = 85°C
Test Conditions: Z0=50Temp=25°C VCC=5.0V [1] Optimal ACP tune [2] Optimal IP3 tune
DS121024
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
(+1) 336-678-5570 [email protected]
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SPA2318Z pdf, 반도체, 판매, 대치품
SPA2318Z
1930MHz to 1990MHz Application Schematic
External Connection
Vcc
10uF Tantalum
68pF
1000pF Ic2
Ic1 8.2pF
1.2nH
1.0pF
6.8K
Ibias
1.5pF(IP3)
2.2pF(ACP)
18nH
1
2
3
4
300 Ohm 1200pF
8 20 nH
7 20pF
6 Z=50 :, 13.2°
5
2.2pF
Tune for optimal ACP performance
Vpc
1930MHz to 1990MHz Evaluation Board Layout and Bill of Materials
Vcc
C5
C4
Short
L2
L1
C3
C1 R1
C6
C7
L3
C2 C8
R2 Tune for optimal ACP performance
C9
Sirenza Microdevices
ECB-101161 Rev. C
SOIC-8 PA
Eval Board
Vpc
Ref. Des.
Value
Part Number
C1
1.5pF, ±0.25pF (IP3)
2.2pF, ±0.25pF (ACP)
Rohm MCH18 series
C2
1200pF, 5%
Rohm MCH18 series
C3
1.0pF, ±0.25pF
Rohm MCH18 series
C4
68pF, 5%
Rohm MCH18 series
C5
10uF, 10%
AVX TAJB106K020R
C6
1000pF, 5%
Rohm MCH18 series
C7
8.2pF, ±0.5pF
Rohm MCH18 series
C8
2.2pF, ±0.25pF
Rohm MCH18 series
C9
20pF, 5%
Rohm MCH18 series
L1
1.2nH, ±0.3nH
Toko LL1608-FS series
L2
18nH, 5%
Toko LL1608-FS series
L3
20nH, 5%
Coilcraft HQ 0805 series
R1
6.8K Ohm, 5%
Rohm MCR03 series
R2
300 Ohm, 5%
Rohm MCR03 series
ACP Optimized 2140MHz Application Circuit Data, ICC=400mA, VCC=5V IS-95, WCDMA setup is
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS121024

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SPA2318Z 전자부품, 판매, 대치품
SPA2318Z
Pin
1
2
3
4
5, 6,
7, 8
EPAD
Function
VC1
VBIAS
RF IN
VPC2
RF OUT / VC2
GND
Description
VC1 is the supply voltage for the first stage transistor. The configuration as shown on the Application Schematic is
required for optimum RF performance.
VBias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Sche-
matic.
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic.
VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in
the Application Schematic.
RF output and bias pins. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present
on this pin, a DC blocking capacitor should be used in most applications (see Application Schematic). The supply side of
the bias network should be well bypassed. An output matching network is necessary for optimum performance.
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and
RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern.
Simplified Device Schematic
Simplified Device Schematic
2
21
4 ACTIVE BIAS
NETWORK
5-8
ACTIVE BIAS
NETWORK
3
A
Parame
Max. Su
Max. Su
Max. De
Max. RF
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 8

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SPA2318Z

POWER AMPLIFIER

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