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PDF SPF5122Z Data sheet ( Hoja de datos )
| Número de pieza | SPF5122Z | |
| Descripción | GaAs pHEMT LOW NOISE MMIC AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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SPF5122Z
50MHz to
4000 MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
SPF5122Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
Product Description
The SPF5122Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF5122Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and NF versus Frequency
Broadband Application Circuit (5V, 90mA)
25.0
4.00
22.0
3.50
19.0
3.00
16.0
2.50
13.0
2.00
10.0
1.50
7.0 1.00
4.0 Gain 0.50
NF
1.0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Features
Ultra-Low Noise Figure=0.60dB
at 900MHz
Gain=18.9dB at 900MHz
High Linearity: OIP3=40.5dBm
at 1900MHz
Channel Power=13.4dBm (-
65dBc IS95 ACPR, 880MHz)
P1dB=23.4dBm at 1900MHz
Single-Supply Operation: 5V at
IDQ = 90 mA
Flexible Biasing Options: 3-5V,
Adjustable Current
Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
PA Driver Amplifier
Low Noise, High Linearity Gain
Block Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Power Gain
17.2
18.9
20.2
dB 0.9GHz
11.2
12.2
14.4 dB 1.96GHz
Output Power at 1dB Compression
20.8
22.8
dBm
0.9 GHz
21.4
23.4
dBm
1.9 GHz
Output Third Order Intercept Point
35.1
38.1
dBm
0.9 GHz
37.2 40.5
dBm
1.9 GHz
Noise Figure
0.59
0.85
dB 0.9GHz
0.65
0.9 dB 1.9GHz
Input Return Loss
10 14.3
dB 0.9 GHz
21 dB 1.9GHz
Output Return Loss
14 17
dB 0.9GHz
13 dB 1.9GHz
Reverse Isolation
24.1 dB 0.9GHz
18.4
dB 1.9GHz
Device Operating Voltage
5.00
5.25
V
Device Operating Current
75 90 105 mA Quiescent
Thermal Resistance
65
°C/W
Junction to lead
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS=ZL=50, 25°C, Broadband Application Circuit
DS110408
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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1 page  
SPF5122Z
Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA
OIP3 versus Power
(900 MHz, 1 MHz spacing)
46.0
OIP3 versus Power
(1900 MHz, 1 MHz spacing)
46.0
42.0
42.0
38.0
38.0
34.0
34.0
30.0
26.0
0.0
-40°C
25°C
85°C
3.0 6.0 9.0 12.0
Output Power per Tone (dBm)
15.0
ACP versus Channel Power @ 880MHz
-30.0
-40.0
IS-95 with 9 DPCH
25°C
-40°C
85°C
880MHz IS95 Source
-50.0
-60.0
-70.0
-80.0
Source
-90.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0
Channel Power (dBm)
30.0
26.0
0.0
25°C
-40°C
85°C
3.0 6.0 9.0 12.0
Output Power per Tone (dBm)
15.0
ACP versus Channel Power @ 2140MHz
-30.0
-40.0
WCDMA with 64 DPCH
-2450°°CC
8S5ys°tCem
-50.0
-60.0
-70.0
-80.0
5.0
Source
7.0
9.0
11.0
13.0
15.0
17.0
Channel Power (dBm)
DS110408
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 12
5 Page 
SPF5122Z
Pin
1
2
3
4
5
6
7
8
EPAD
Function
N/A
RF IN
N/A
N/A
N/A
N/A
RF OUT/BIAS
N/A
GND
Pin Names and Description
Description
Ground or No-Connect. No Connection Internal
RF Input, DC Coupled and Matched to 50. An External DC Block is Required.
Ground or No-Connect. No Connection Internal
Ground or No-Connect. No Connection Internal
Ground or No-Connect. No Connection Internal
Ground or No-Connect. No Connection Internal
RF Output, Bias Applied Through This Pin. Matched to 50.
Ground or No-Connect. No Connection Internal
EPAD Must be Conductively Attached to RF and DC Ground.
Part Identification
Pin 1 Designation (top view)
Suggested Pad Layout (Dimensions in inches)
18
2 SPF 7
51Z
36
45
0.0295
0.0088
0.0337
0.0057
Ø0.0120
Ø0.0200
Package Drawing
Dimensions in millimeters
Refer to drawing posted at www.rfmd.com for tolerances.
DS110408
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SPF5122Z.PDF ] | |
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