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PDF SUF-1000 Data sheet ( Hoja de datos )

Número de pieza SUF-1000
Descripción Cascadable pHEMT MMIC Amplifier
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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No Preview Available ! SUF-1000 Hoja de datos, Descripción, Manual

SUF-1000
Cascadable pHEMT MMIC Amplifier
DC to 20GHz
RFMD’s SUF-1000 is a monolithically matched high IP3
broadband pHemt MMIC amplifier. The self-biased direct-
coupled topology provides exceptional cascadable
performance from DC to 20GHz. Its efficient operation from a
single 5V supply and its compact size (0.88mm x 0.75mm)
make it ideal for high-density multi-chip module applications. It
is well suited for wideband instrumentation and direct-
conversion systems.
Package: Die, 0.88mm x 0.75mm
Features
Broadband Flat Gain = 10dB
P1dB = 14dBm
Direct-Coupled Topology
Efficient Single-Supply Operation:
5V, 45mA
Low Gain Variation versus
Temperature
Compact Die Size
(0.75mm x 0.88m)
Patented Self-Bias Darlington
Applications
Ultra-Broadband Communications
Test Instrumentation
Military and Space
LO and IF Mixer Applications
Replaces Traditional Dual-Supply
Distributed Amplifiers
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140108
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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SUF-1000 pdf
SUF-1000
Pad Description (Dimensions in inches [millimeters])
Notes:
1.
2.
3.
4.
5.
6.
No connection required for unlabeled bond pads
Die thickness is 0.004 [0.10]
Typical bond pad is 0.004 [0.10] square
Backside metallization: Gold
Backside is ground
Bond pad metallization: Gold
Pin Names and Descriptions
Pin Name
Description
1
RFIN
This pad is DC coupled and matched to 50Ω. An external DC block is required.
2 RFOUT/BIAS This pad is DC coupled and matched to 50Ω. Bias is applied through this pad.
Die Bottom
GND
Die bottom must be connected to RF/DC ground using silver-filled epoxy.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140108
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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