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부품번호 | RJF0409JSP 기능 |
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기능 | Silicon N Channel Thermal FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
Preliminary Datasheet
RJF0409JSP
40V, 5A Silicon N Channel Thermal FET
Power Switching
R07DS1228EJ0200
Rev.2.00
Dec 02, 2014
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• High density mounting
• Power supply voltage applies 12 V.
• AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 7 65
1 234
2 Current
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
78
4
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
56
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
MOS1
1
MOS2
3
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
40
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 3
EAR Note 3
Pch Note 1
Pch Note 2
5
1.5
15
1
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2. 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. Tch = 25°C, Rg ≥ 50 Ω
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
Page 1 of 7
RJF0409JSP
Static Drain to Source On State Resistance
vs. Temperature
200
Pulse Test
5A
150
ID = 1 A, 2.5 A
100 VGS = 5 V
50
10 V
ID = 1 A, 2.5 A, 5 A
0
−50 −25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
10
tr
td(off)
tf
1 td(on)
0.1
0.1
VGS = 10 V, VDD = 30 V
PW = 300 μs, duty ≤ 1 %
1 10
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2 5V
VGS = 0 V
1
Pulse Test
0 0.2 0.4 0.6 0.8 1.0 1.2
Source to Drain Voltage VSD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
di / dt = 50 A /μs
10 VGS = 0
0.1 1 10
Reverse Drain Current IDR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
100
Coss
10
0 10 20 30 40
Drain to Source Voltage VDS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
VDD = 16 V
10
8
6
4
2
0
0.1 1 10
Shutdown Time of Load-Short Test Pw (ms)
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
Page 4 of 7
4페이지 RJF0409JSP
Package Dimensions
Package Name
SOP-8
JEITA Package Code
P-SOP8-3.95 x 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
Preliminary
*1 D
8
5
bp
Index mark
1
Z
4
*3 bp
e
xM
y
Terminal cross section
(Ni/Pd/Au plating)
L1
L
Detail F
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol Min Nom Max
D 4.90 5.3
E 3.95
A2
A1 0.10 0.14 0.25
A 1.75
bp 0.34 0.40 0.46
b1
c 0.15 0.20 0.25
c1
0° 8°
HE 5.80 6.10 6.20
e 1.27
x 0.25
y 0.1
Z 0.75
L 0.40 0.60 1.27
L1 1.08
Ordering Information
Orderable Part Number
Quantity
RJF0409JSP-00-J0
2500 pcs/reel
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
Shipping Container
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
Page 7 of 7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
RJF0409JSP | Silicon N Channel Thermal FET | Renesas |
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