Datasheet.kr   

RJF0409JSP 데이터시트 PDF




Renesas에서 제조한 전자 부품 RJF0409JSP은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 RJF0409JSP 자료 제공

부품번호 RJF0409JSP 기능
기능 Silicon N Channel Thermal FET
제조업체 Renesas
로고 Renesas 로고


RJF0409JSP 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

RJF0409JSP 데이터시트, 핀배열, 회로
Preliminary Datasheet
RJF0409JSP
40V, 5A Silicon N Channel Thermal FET
Power Switching
R07DS1228EJ0200
Rev.2.00
Dec 02, 2014
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
High density mounting
Power supply voltage applies 12 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 7 65
1 234
2 Current
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
78
4
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
56
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
MOS1
1
MOS2
3
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
40
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 3
EAR Note 3
Pch Note 1
Pch Note 2
5
1.5
15
1
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
2. 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
3. Tch = 25°C, Rg 50 Ω
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
Page 1 of 7




RJF0409JSP pdf, 반도체, 판매, 대치품
RJF0409JSP
Static Drain to Source On State Resistance
vs. Temperature
200
Pulse Test
5A
150
ID = 1 A, 2.5 A
100 VGS = 5 V
50
10 V
ID = 1 A, 2.5 A, 5 A
0
50 25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
10
tr
td(off)
tf
1 td(on)
0.1
0.1
VGS = 10 V, VDD = 30 V
PW = 300 μs, duty 1 %
1 10
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2 5V
VGS = 0 V
1
Pulse Test
0 0.2 0.4 0.6 0.8 1.0 1.2
Source to Drain Voltage VSD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
di / dt = 50 A /μs
10 VGS = 0
0.1 1 10
Reverse Drain Current IDR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
100
Coss
10
0 10 20 30 40
Drain to Source Voltage VDS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
VDD = 16 V
10
8
6
4
2
0
0.1 1 10
Shutdown Time of Load-Short Test Pw (ms)
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
Page 4 of 7

4페이지










RJF0409JSP 전자부품, 판매, 대치품
RJF0409JSP
Package Dimensions
Package Name
SOP-8
JEITA Package Code
P-SOP8-3.95 x 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
Preliminary
*1 D
8
5
bp
Index mark
1
Z
4
*3 bp
e
xM
y
Terminal cross section
(Ni/Pd/Au plating)
L1
L
Detail F
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol Min Nom Max
D 4.90 5.3
E 3.95
A2
A1 0.10 0.14 0.25
A 1.75
bp 0.34 0.40 0.46
b1
c 0.15 0.20 0.25
c1
0° 8°
HE 5.80 6.10 6.20
e 1.27
x 0.25
y 0.1
Z 0.75
L 0.40 0.60 1.27
L1 1.08
Ordering Information
Orderable Part Number
Quantity
RJF0409JSP-00-J0
2500 pcs/reel
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
Shipping Container
R07DS1228EJ0200 Rev.2.00
Dec 02, 2014
Page 7 of 7

7페이지


구       성 총 8 페이지수
다운로드[ RJF0409JSP.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
RJF0409JSP

Silicon N Channel Thermal FET

Renesas
Renesas

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵