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Número de pieza | RJF0410JPE | |
Descripción | Silicon N Channel Thermal FET | |
Fabricantes | Renesas | |
Logotipo | ||
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40V - 40A - N Channel Thermal FET
Power Switching
Data Sheet
R07DS1237EJ0200
Rev.2.00
Jan 29, 2015
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation.
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Power supply voltage applies 12 V.
• AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
G
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
Drain current
VGSS
ID Note3
Body-drain diode reverse drain current
IDR
Avalanche current
Avalanche energy
IAP Note 2
EAR Note 2
Channel dissipation
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg ≥ 50 Ω
3. It provides by the current limitation lower bound value.
Ratings
40
16
–2.5
40
40
12
960
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS1237EJ0200 Rev.2.00
Jan 29, 2015
Page 1 of 7
1 page RJF0410JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8 VDD = 16 V
6
4
2
0
0.1 1 10
Shutdown Time of Load-Short Test PW (μs)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 ID = 1 A
100
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1 0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 μ
100 μ
θch- c(t) = γs (t) · θch- c
θch- c = 1.25°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
R07DS1237EJ0200 Rev.2.00
Jan 29, 2015
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RJF0410JPE.PDF ] |
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