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부품번호 | RJF0606JPE 기능 |
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기능 | Silicon N Channel Thermal FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
Target Specifications Datasheet
RJF0606JPE
60V-40A Silicon N Channel Thermal FET
Power Switching
R07DS0580EJ0300
Rev.3.00
May 15, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Power supply voltage applies 12 V and 24 V.
• AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
2,4
1. Gate
2. Drain
3. Source
4. Drain
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
VGSS
ID Note3
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg ≥ 50 Ω
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
40
40
12
617
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 1 of 7
RJF0606JPE
Static Drain to Source on State Resistance
vs. Temperature
35
Pulse Test
30
25
ID = 20 A
10 A
5A
20
VGS = 4 V
15
20 A
ID = 5, 10 A
10
10 V
5
–50 –25 0
25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
10
0.1
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1 10 100
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
40
Pulse Test
30
20 0 V
VGS = 5 V
10
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Target Specifications
Forward Transfer Admittance vs.
Drain Current
100
VDS = 10 V
Pulse Test
Tc = –40°C
25°C
10
150°C
1
0.1
0.1
1 10
Drain Current ID (A)
100
Switching Characteristics
100
tr
tf
10 td(off)
td(on)
VGS = 10 V, VDD = 30 V
PW = 300 μs, duty ≤ 1 %
1
0.1 1 10
Drain Current ID (A)
100
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
300
100 Coss
30
10
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 4 of 7
4페이지 RJF0606JPE
Package Dimensions
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
Previous Code
MASS[Typ.]
PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V
1.30g
Target Specifications
Unit: mm
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
2.54 ± 0.5
1.37 ± 0.2
0.86
+
–
0.2
0.1
2.54 ± 0.5
2.49 ± 0.2
0.1
+
–
0.2
0.1
0.4 ± 0.1
7.8
6.6
2.2
Ordering Information
Orderable Part Number
Quantity
RJF0606JPE-00-J3
1000 pcs
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
Shipping Container
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 7 of 7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
RJF0606JPE | Silicon N Channel Thermal FET | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |