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부품번호 | RJF0611DPD 기능 |
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기능 | Silicon N Channel MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
Target Specifications Datasheet
RJF0611DPD
Silicon N Channel MOS FET Series
Power Switching
R07DS0716EJ0100
Rev.1.00
Apr 17, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
For Industrial applications
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
1
2
3
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
Drain current
VGSS
ID Note3
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
30
30
6.7
192
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
Page 1 of 7
RJF0611DPD
Static Drain to Source on State Resistance
vs. Temperature
55
Pulse Test
50
45
40
35
30 VGS = 4 V
25
20
ID = 15 A
10 A
5A
10 A
5A
ID = 15 A
15
10 V
10
–50 –25 0
25 50
75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
10
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1
0.1 1 10 100
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
30
Pulse Test
25
20
15 VGS = 5 V
10
5 0V
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage VSD (V)
Target Specifications
Forward Transfer Admittance vs.
Drain Current
100
VDS = 10 V
Pulse Test
Tc = –40°C
25°C
10
1 150°C
0.1
0.1
1 10
Drain Current ID (A)
100
Switching Characteristics
100
VGS = 10 V, VDD = 30 V
PW = 300 μs, duty ≤ 1 %
10
1
0.1
tr
tf
td(off)
td(on)
1 10
Drain Current ID (A)
100
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300 Coss
100
30 VGS = 0
f = 1 MHz
10
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
Page 4 of 7
4페이지 RJF0611DPD
Package Dimensions
Package Name
DPAK(S)
JEITA Package Code
SC-63
RENESAS Code
Previous Code
MASS[Typ.]
PRSS0004ZD-C DPAK(S) / DPAK(S)V
0.28g
Target Specifications
Unit: mm
6.5 ± 0.3
5.6 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
(5.1)
1.0 Max.
2.29 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
0 – 0.25
0.55 ± 0.1
Ordering Information
Orderable Part Number
Quantity
RJF0611DPD-00-J3
3000 pcs
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
Shipping Container
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
Page 7 of 7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
RJF0611DPD | Silicon N Channel MOS FET | Renesas |
RJF0611DPE | Silicon N Channel MOS FET | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |