RJF0612DPE Datasheet PDF - Renesas
| Part Number | RJF0612DPE | |
| Description | Silicon N Channel Thermal FET | |
| Manufacturers | Renesas | |
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There is a preview and RJF0612DPE download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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Target Specifications Datasheet
RJF0612DPE
60V - 50A - N Channel Thermal FET
Power Switching
R07DS0903EJ0100
Rev.1.00
Nov 01, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
For Industrial applications
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
G
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
Drain current
VGSS
ID Note3
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
50
50
15
964
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS0903EJ0100 Rev.1.00
Nov 01, 2012
Page 1 of 7
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RJF0612DPE
Target Specifications
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8 VDD = 16 V
6
4 24 V
2
0
100
1000
10000
Shutdown Time of Load-Short Test Pw (μs)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 ID = 5 A
100
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 μ
100 μ
θch- c(t) = γ s (t) • θch- c
θch- c = 1.25°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
R07DS0903EJ0100 Rev.1.00
Nov 01, 2012
Page 5 of 7
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RJF0612DPE electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RJF0612DPE.PDF Datasheet ] | |
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