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부품번호 | RJF0610JSP 기능 |
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기능 | Silicon N Channel MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
Target Specifications Datasheet
RJF0610JSP
Silicon N Channel MOS FET Series
Power Switching
R07DS0568EJ0200
Rev.2.00
Apr 16, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (5 to 6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Temperature hysteresis type.
High density mounting
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8765
1, 3
2, 4
1234
5, 6, 7, 8
2
G
Source
Gate
Drain
Gate Resistor
Current
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
MOS1
DD
78
4 Current
G
Gate Resistor
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
1
S MOS2
DD
56
3
S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
1.5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 3
EAR Note 3
Pch Note 1
Pch Note 2
1.5
0.95
77.4
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
2. 2 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
3. Tch = 25C, Rg 50 , L = 100 mH
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 1 of 7
RJF0610JSP
Static Drain to Source on State Resistance
vs. Temperature
400
Pulse Test
300 ID = 0.2, 0.7, 1 A
VGS = 5 V
200
100
–50 –25
10 V
0 25
ID = 0.2, 0.7, 1 A
50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
100
VGS = 5 V, VDD = 30 V
PW = 300 μs, duty ≤ 1 %
tr
10
td(on)
1
0.1
0.1
tf
td(off)
1
Drain Current ID (A)
10
10000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
100
10
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
Target Specifications
1000
Body-Drain Diode Reverse
Recovery Time
100
10
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1
0.1 1 10
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
1.5
Pulse Test
VGS = 5 V
1
0.5
0
0 0.2 0.4 0.6 0.8 2.0
Source to Drain Voltage VSD (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
8
24 V
6
VDD = 16 V
4
2
0
1 10 100
Shutdown Time of Load-Short Test PW (mS)
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 4 of 7
4페이지 RJF0610JSP
Package Dimensions
Package Name
SOP-8
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
Target Specifications
*1 D
8
5
Index mark
1
Z
4
*3 bp
e
xM
y
Ordering Information
Orderable Part Number
RJF0610JSP-00#J0
Quantity
2500 pcs
bp
Terminal cross section
(Ni/Pd/Au plating)
L1
L
Detail F
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol Min Nom Max
D 4.90 5.3
E 3.95
A2
A1 0.10 0.14 0.25
A 1.75
bp 0.34 0.40 0.46
b1
c 0.15 0.20 0.25
c1
0° 8°
HE 5.80 6.10 6.20
e 1.27
x 0.25
y 0.1
Z 0.75
L 0.40 0.60 1.27
L1 1.08
Taping (Reel)
Shipping Container
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 7 of 7
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부품번호 | 상세설명 및 기능 | 제조사 |
RJF0610JSP | Silicon N Channel MOS FET | Renesas |
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