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PDF 2SJ555 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ555 | |
| Descripción | P-Channel MOSFET ( Transistor ) | |
| Fabricantes | Renesas | |
| Logotipo |  |
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2SJ555
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.017 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
G
D
S
REJ03G0902-0300
(Previous: ADE-208-634A)
Rev.3.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 7
1 page  
2SJ555
–100
Reverse Drain Current vs.
Source to Drain Voltage
–80
–60 –10 V
–40 –5 V
–20
VGS = 0
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
500
IAP = –60 A
VDD = –25 V
400 duty < 0.1 %
Rg ≥ 50 Ω
300
200
100
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 1.0°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Vin
–15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.3.00 Sep 07, 2005 page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ555.PDF ] | |
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