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2SK1162 데이터시트 PDF




Renesas에서 제조한 전자 부품 2SK1162은 전자 산업 및 응용 분야에서
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PDF 형식의 2SK1162 자료 제공

부품번호 2SK1162 기능
기능 Silicon N Channel MOS FET
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2SK1162 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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2SK1162 데이터시트, 핀배열, 회로
2SK1161, 2SK1162
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
REJ03G0912-0200
(Previous: ADE-208-1250)
Rev.2.00
Sep 07, 2005
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6




2SK1162 pdf, 반도체, 판매, 대치품
2SK1161, 2SK1162
Static Drain to Source on State
Resistance vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6
ID = 10 A
1.2
0.8 2, 5 A
0.4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
1,000
500
200
100
50
0.2
0.5 1.0 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500 20
400
VDS
300
VDD = 100 V
250 V
400 V
16
12
VGS
200 8
ID = 7 A
100 VDD = 400 V
4
250 V
100 V
0
0 8 16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
10
5
–25°C
TC = 25°C
75°C
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10
5,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
100
10 Crss
5
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
200
100
td (off)
50 tf
20 tr
10
td (on)
5
0.2 0.5
1.0 2
5 10 20
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6

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2SK1162 전자부품, 판매, 대치품
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
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http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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