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Número de pieza | RU30120S | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU30120S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU30120S
N-Channel Advanced Power MOSFET
Features
• 30V/120A,
RDS (ON) =2.5mΩ(Typ.)@VGS=10V
RDS (ON) =3.3mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% Avalanche Tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters
Pin Description
D
G
S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
30
±20
175
-55 to 175
120
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
480 A
120
A
100
150
W
75
1 °C/W
62.5 °C/W
306 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
www.ruichips.com
1 page RU30120S
Typical Characteristics
Output Characteristics
300
10V
250 8V
6V
200
150 5V
100
50 3V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
IDS=60A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=2.5mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
5000
4500
4000
Frequency=1.0MHz
3500
3000
2500
Ciss
2000
1500
1000
Coss
500
Crss
0
1
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
5
Drain-Source On Resistance
10
8
6
4
4.5V
2
10V
0
0
100
20 40 60 80
ID - Drain Current (A)
100
Source-Drain Diode Forward
10 TJ=175°C
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=24V
IDS=60A
8
Gate Charge
7
6
5
4
3
2
1
0
0
20 40 60
QG - Gate Charge (nC)
80
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU30120S.PDF ] |
Número de pieza | Descripción | Fabricantes |
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RU30120S | N-Channel Advanced Power MOSFET | Ruichips |
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