|
|
PDF CS20N50ANH Data sheet ( Hoja de datos )
| Número de pieza | CS20N50ANH | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Discrete Devices | |
| Logotipo |  |
|
1. CS20N50ANH pdf datasheet  Hay una vista previa y un enlace de descarga de CS20N50ANH (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS20N50 ANH
General Description：
CS20N50 ANH, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3PN,
which accords with the RoHS standard..
Features：
l Fast Switching
500
20
230
0.25
l Low ON Resistance(Rdson≤0.3Ω)
l Low Gate Charge (Typical Data:63nC)
l Low Reverse transfer capacitances(Typical:25pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
500
20
12.5
80
±30
1500
90
4.3
5.0
230
1.84
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012
1 page  
Huajing Discrete Devices
○R CS20N50 ANH
1000
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
1.00E-05
100
10
1.00E-04
1.00E-03
1.00E-02
t ，Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
1.4
PULSE DURATION = 250μs
DUTY CYCLE = 0.5%MAX
VDS=50V
1.2
1
0.8
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID=20A
ID=10A
0.6 ID=5A
1
+150℃
0.4
+25℃
0.1
2
-55℃
3456789
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
0.8
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
0.6
0.2
0
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage ，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
VGS=10V ID=10A
2.5
2
0.4
VGS=10V
1.5
VGS=20V
1
0.2
0.5
0
0 20 40 60
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
80
0
-100 -50 0 50 100 150 200
Tj, Junction temperature , C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS20N50ANH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CS20N50ANH | Silicon N-Channel Power MOSFET | Huajing Discrete Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |