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PDF SSE08N60SL Data sheet ( Hoja de datos )

Número de pieza SSE08N60SL
Descripción N-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SSE08N60SL
8A , 600V , RDS(ON) 1.2
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSE08N60SL is an N-channel enhancement mode
power MOS field effect transistor which is produced. The
improved planar strip cell and the improved guarding ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers,
DC-DC converters and H-bridge PWM motor drivers.
FEATURES
8A, 600V, RDS(ON)(TYP.)=0.96@VGS=10V
Low Gate Charge
Low Crss
Fast Switching
Improved dv/dt Capability
1
Gate
2
Drain
3
Source
TO-220P
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
9.3 10.6
14.2 16.5
2.7 BSC.
12.6 14.7
1.0 1.8
0.4 1.0
3.6 4.8
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
2.54 BCS.
1.8 2.9
2.6 3.95
0.3 0.7
5.8 7.0
1.0 1.45
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=25°C
TC=100°C
ID
8
5
Pulsed Drain Current
IDM 32
Total Power Dissipation
Single Pulse Avalanche Energy 1
TC=25°C
Derate above 25°C
PD
EAS
147
1.18
450
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient RθJA 62.5
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=5A, VDD=110V, RG=25, Starting TJ =25°C
RθJC
0.85
Unit
V
V
A
A
A
W
°C / W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
09-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5

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SSE08N60SL pdf
Elektronische Bauelemente
TYPICAL TEST CURVES
SSE08N60SL
8A , 600V , RDS(ON) 1.2
N-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
09-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
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