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PDF 2N3798A Data sheet ( Hoja de datos )
| Número de pieza | 2N3798A | |
| Descripción | SILICON PNP TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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2N3798 2N3798A
2N3799 2N3799A
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3798, 2N3799
series devices are silicon PNP epitaxial planar transistors
designed for low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
2N3798
2N3799
2N3798A
2N3799A
UNITS
Collector-Base Voltage
VCBO
60
90
V
Collector-Emitter Voltage
VCEO
60
90
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC 50 mA
Power Dissipation
PD 360 mW
Power Dissipation (TC=25°C)
PD 1.2
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
JA 0.49 °C/mW
Thermal Resistance
JC 150 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
10 nA
ICBO
VCB=50V, TA=150°C
10 μA
IEBO
VEB=4.0V
20 nA
BVCBO
IC=10μA (2N3798, 2N3799)
60
V
BVCBO
IC=10μA (2N3798A, 2N3799A)
90
V
BVCEO
IC=10mA (2N3798, 2N3799)
60
V
BVCEO
IC=10mA (2N3798A, 2N3799A)
90
V
BVEBO
IE=10μA
5.0
V
VCE(SAT) IC=100μA, IB=10μA
0.20 V
VCE(SAT) IC=1.0mA, IB=100μA
0.25 V
VBE(SAT) IC=100μA, IB=10μA
0.70 V
VBE(SAT) IC=1.0mA, IB=100μA
0.80 V
VBE(ON)
VCE=5.0V, IC=100μA
0.70 V
2N3798
2N3799
2N3798A
2N3799A
MIN MAX
MIN MAX
hFE VCE=5.0V, IC=1.0μA
--
75 -
hFE VCE=5.0V, IC=10μA
100 -
225 -
hFE VCE=5.0V, IC=100μA
150 -
300 -
hFE
VCE=5.0V, IC=100μA, TA=-55°C 75
-
150 -
hFE VCE=5.0V, IC=500μA
150 450
300 900
hFE VCE=5.0V, IC=1.0mA
hFE VCE=5.0V, IC=10mA
150 -
125 -
300 -
250 -
R1 (22-September 2014)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3798A.PDF ] | |
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