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PDF 2N3810A Data sheet ( Hoja de datos )
| Número de pieza | 2N3810A | |
| Descripción | SILICON DUAL PNP TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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2N3810
2N3810A
SILICON
DUAL PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A
are dual silicon PNP transistors manufactured by the
epitaxial planar process utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
60
60
5.0
50
500
600
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
IEBO
BVCBO
BVCEO
VCB=50V
VEB=4.0V
IC=10μA
IC=10mA
60
60
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
IE=10μA
IC=100μA, IB=10μA
IC=1.0mA, IB=100μA
IC=100μA, IB=10μA
5.0
VBE(SAT)
VBE(ON)
hFE
hFE
IC=1.0mA, IB=100μA
VCE=5.0V, IC=100μA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
100
150
hFE VCE=5.0V, IC=500μA
150
hFE VCE=5.0V, IC=1.0mA
150
hFE VCE=5.0V, IC=10mA
125
fT
VCE=5.0V, IC=500μA, f=30MHz
30
fT
VCE=5.0V, IC=1.0mA, f=100MHz
100
Cob VCB=5.0V, IE=0, f=100kHz
Cib VBE=0.5V, IC=0, f=100kHz
hie
VCE=10V, IC=1.0mA, f=1.0kHz
3.0
hre VCE=10V, IC=1.0mA, f=1.0kHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
150
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
NF VCE=10V, IC=100μA, RG=3.0kΩ,
f=100Hz, BW=20Hz
MAX
10
20
0.20
0.25
0.70
0.80
0.70
450
450
450
500
4.0
8.0
30
25
600
60
7.0
UNITS
V
V
V
mA
mW
mW
°C
UNITS
nA
nA
V
V
V
V
V
V
V
V
MHz
MHz
pF
pF
Ω
x10-4
μS
dB
R1 (4-June 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3810A.PDF ] | |
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