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Número de pieza | RFCA8818 | |
Descripción | Low Noise GaAs Amplifier | |
Fabricantes | RF Micro Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFCA8818 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RFCA8818
Dual CATV
40MHz to
1008MHz
High Linearity,
Low Noise
GaAs Amplifier
RFCA8818
Dual CATV 40MHz to 1008MHz High Linearity,
Low Noise GaAs Amplifier
Package: Thermally Enhanced SOIC-8
Features
75 Push-Pull Amplifier
40MHz to 1008MHz Operation
Internally Matched Input and
Output
17dB Small Signal Gain
2.0dB Noise Figure
Single 7V Positive Power Supply
Applications
Linear LNA/Driver
CATV Line Driver Amplifier
Broadband Gain Blocks
FTTx / xPON / ONU Driver
Amplifier
Functional Block Diagram
Product Description
RFMD's RFCA8818 is a low-noise, linear high performance GaAs MESFET MMIC
amplifier. The RFCA8818 contains two amplifiers for use in wideband push-pull
CATV amplifiers requiring excellent second order performance. The second and
third order non-linearities are greatly improved in the push-pull configuration.
Ordering Information
RFCA8818SQ
RFCA8818SR
RFCA8818TR13
RFCA8818PCK-410
Sample bag with 25 pieces
7" Reel with 100 pieces
13" Reel with 2500 pieces
40MHz to 1008MHz PCBA with 5-piece sample bag
DS121115
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8
1 page RFCA8818
Pin
1
2, 3, 6, 7
4
5
8
EPAD
Name
RFIN
GND
RFIN
RFOUT / VCC
RFOUT / VCC
GND
Pin Names and Descriptions
Description
Device 1, RF input pin. This pin is internally DC blocked. An external DC blocking capacitor is not
required.
Connection to ground. use via holes for best performance to reduce lead inductance as close to
ground leads as possible.
Device 1, RF input pin. This pin is internally DC blocked. An external DC blocking capacitor is not
required.
Device 2, RF output and bias pin. Because DC is present on this pin, a DC blocking capacitor suitable
for the frequency of operation should be used in most applications. For biasing, only an RF choke is
needed.
Device 1, RF output and bias pin. Because DC is present on this pin, a DC blocking capacitor suitable
for the frequency of operation should be used in most applications. For biasing, only an RF choke is
needed.
Exposed area on the bottom side of the package must be soldered to the ground plane of the board for
optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the
recommended land pattern.
PCB Pad Layout
DS121115
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RFCA8818.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFCA8818 | Low Noise GaAs Amplifier | RF Micro Devices |
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