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PDF RFU02VS6S Data sheet ( Hoja de datos )

Número de pieza RFU02VS6S
Descripción Super Fast Recovery Diode
Fabricantes ROHM Semiconductor 
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Data Sheet
Super Fast Recovery Diode
RFU02VS6S
Series
Ultra Fast Recovery
Applications
High frequency rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
   0.05
Land size figure (Unit : mm)
1.1
Features
1)Small mold type.(TUMD2S)
2)high switching speed
TUMD2S
Structure
Construction
Silicon epitaxial planer
0.8±0.05
0.6±0.2
ROHM : TUMD2S
    0.1
dot (year week factory) + day
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0
0.25±0.05
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
0.9±0.08
Conditions
D0.5
Direct voltage
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
600
600
0.2
Unit
V
V
A
1
150
55 to 150
A
C
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Reverse recovery time
trr
Thermal capacitance
Ct
Conditions
IF=0.2A
VR=600V
IF=0.1A,IR=0.1A,Irr=0.1×IR
IF=0.1A,IR=0.2A,Irr=0.1×IR
VR=0V,f=1MHz
Min.
Typ. Max.
1.5 2.2
0.01 10
24 35
15 25
5
Unit
V
μA
ns
ns
pF
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A

1 page




RFU02VS6S pdf
Notes
Notice
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A

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