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부품번호 | VS-10BQ100PbF 기능 |
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기능 | Schottky Rectifier ( Diode ) | ||
제조업체 | Vishay | ||
로고 | |||
전체 6 페이지수
www.vishay.com
VS-10BQ100PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
Cathode
Anode
SMB
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
SMB
1.0 A
100 V
0.78 V
1 mA at 125 °C
175 °C
Single die
1.0 mJ
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Designed and qualified for industrial level
DESCRIPTION
The VS-10BQ100PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 1.0 Apk, TJ = 125 °C
TJ Range
VALUES
1.0
100
780
0.62
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10BQ100PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 152 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.0
780
38
1.0
0.5
UNITS
A
A
mJ
A
Revision: 20-May-14
1 Document Number: 94114
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1000
VS-10BQ100PbF
Vishay Semiconductors
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
ORDERING INFORMATION TABLE
Device code VS- 10 B Q 100 TR PbF
1 2 3 4567
1 - Vishay Semiconductors product
2 - Current rating
3 - B = single lead diode
4 - Q = Schottky “Q” series
5 - Voltage rating (100 = 100 V)
6-
None = box (1000 pieces)
TR = tape and reel (3000 pieces)
7 - PbF = lead (Pb)-free
Dimensions
Part marking information
Packaging information
SPICE model
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95017
www.vishay.com/doc?95029
Tape and reel
www.vishay.com/doc?95034
Bulk
www.vishay.com/doc?95397
www.vishay.com/doc?95276
Revision: 20-May-14
4 Document Number: 94114
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
VS-10BQ100PbF | Schottky Rectifier ( Diode ) | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |