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부품번호 | JCS840B 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JILIN SINO-MICROELECTRONICS | ||
로고 | |||
www.DataSheet.co.kr
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS840
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 8 A
VDSS 500 V
Rdson(@Vgs=10V) 0.8 Ω
Qg 59 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低CrssB B (典型值 35pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow CrssB B (typical 35pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
Order codes
Marking
JCS840S-O-S-N-B JCS840S
JCS840B-O-B-N-B JCS840B
JCS840C-O-C-N-B JCS840C
JCS840F-O-F-N-B
JCS840F
封装
Package
TO-263
TO-262
TO-220C
TO-220MF
无卤素
Halogen Free
否 NO
否 NO
否 NO
否 NO
包装
Packaging
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device Weight
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201007A
1/12
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
tBdB(on)
trB B
VBDDB=250V,IBDB=8.0A,RBGB=25Ω
(note 4,5)
延迟时间 Turn-Off delay time
tBdB(off)
下降时间 Turn-Off Fall time
tfB B
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
QgB B
QgsB B
QgdB B
VDSB B =400V ,
IBDB=8.0A
VGSB B =10V (note 4,5)
JCS840
- 22 55 ns
- 65 140 ns
- 125 260 ns
- 75 160 ns
- 59 70 nC
- 6.5 - nC
- 28 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
ISB B - - 8.0 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISMB B - - 32 A
正向压降
Drain-Source Diode Forward
Voltage
VSDB B
VBGSB=0V,
IBSB=8.0A
- - 1.4 V
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
trrB B VBGSB=0V, IBSB=8.0A
- 390 - ns
QrrB B
dIBFB/dt=100A/μs (note 4)
- 4.2 - μC
热特性 THERMAL CHARACTERISTIC
项目
Parameter
最大
符号
Max
Symbol
JCS840S/B/C JCS840F
单位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.93
2.86 ℃/W
结到环境的热阻
Rth(j-A)
Thermal Resistance, Junction to Ambient
62.5
62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=9.0mH, IBASB=8.0A, VBDDB=50V, RBGB=25 Ω,起始结
温TBJB=25℃
3:ISDB B ≤8.0A,di/dt ≤200A/μs,VDD≤BVBDSSB,起始结温
TBJB=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1 : Pulse width limited by maximum junction
temperature
2:L=9.0mH, IBASB=8.0A, VBDDB=50V, RBGB=25 Ω,Starting
TBJB=25℃
3 : ISDB B ≤8.0A,di/dt ≤200A/μs,VDD≤BVBDSSB, Starting
TBJB=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201007A
4/12
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 www.DataSheet.co.kr
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS840S/B/C
JCS840
Transient Thermal Response Curve
For JCS840F
版本:201007A
7/12
Datasheet pdf - http://www.DataSheet4U.net/
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ JCS840B.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
JCS840 | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
JCS840B | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |