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PDF MBT6517LT1 Data sheet ( Hoja de datos )
| Número de pieza | MBT6517LT1 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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MBT6517LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
* Collector Dissipation: Pc=225mW(Ta=25 )
* Collector-Emitter Voltage :Vceo=350V
ABSOLUTE MAXIMUM RATINGS at Ta=25
DCharacteristic
Symbol Rating
Collector-Base Voltage
Vcbo
350
TCollector-Emitter Voltage
Vceo
350
.,LEmitter-Base Voltage
Collector Current
Base Current
Vebo
Ic
Ib
6
500
250
Collector Dissipation Ta=25 *
PD 225
OJunction Temperature
Storage Temperature
Tj 150
Tstg -55-150
V
V
V
mA
mA
mW
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
CELECTRICAL CHARACTERISTICS at Ta=25
ICCharacteristic
Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage BVcbo 350
V Ic=100uA Ie=0
Collector-Emitter
NVoltage#
Breakdown Bvceo 350
V Ic= 1mA Ib=0
Emitter-Base Breakdown Voltage
BVebo 6
V Ie= 10uA Ic=0
OCollector Cutoff Current
Icbo
50 nA Vcb= 250V Ie=0
Emitter Cutoff Current
Iebo
50 nA Veb=5V Ic=0
RDC Current Gain
Hfe1 20
Vce=10V Ic=1mA
TDC Current Gain
Hfe2 30
Vce=10V Ic=10mA
DC Current Gain
Hfe3 30
200 Vce=10V Ic=30mA
CDC Current Gain
Hfe4 20
200 Vce=10V Ic=50mA
DC Current Gain
Hfe5 15
Vce=10V Ic=100mA
ECollector-Emitter Saturation Voltage Vce(sat)
0.3 V Ic=10mA Ib=1mA
Collector-Emitter Saturation Voltage Vce(sat)
0.5 V Ic=30mA Ib=3mA
LBase-Emitter Saturation Voltage
Vbe(sat)
0.75 V Ic=10mA Ib=1mA
EBase-Emitter Saturation Voltage
Vbe(sat)
0.9 V Ic=30mA Ib=3mA
Base-Emitter On Voltage
Vbe(on)
2 V Vce=10V Ic=100mA
JCurrent Gain Bandwidth Product fT 40
200 MHz Vce=20V Ic=10mA
F=20MHz
ECollect Base Capacitance
Ccb
6 PF Vcb=20V Ie=0 f=1MHz
Emitter Base Capacitance
Ceb
80 PF Veb=0.5V f=1.00MHz
W * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING: MMBT6517LT=1Z
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| PDF Descargar | [ Datasheet MBT6517LT1.PDF ] | |
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