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부품번호 | FB1J3P 기능 |
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기능 | on-chip resistor NPN silicon epitaxial transistor | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
COMPOUND TRANSISTOR
FB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FB1 SERIES LISTS
Products
Marking
FB1A4A
FB1L2Q
FB1A3M
FB1F3P
FB1J3P
FB1L3N
FB1A4M
P30
P31
P32
P33
P36
P34
P35
R1 (KΩ)
−
0.47
1.0
2.2
3.3
4.7
10
R2 (KΩ)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
* PW≤10 ms, duty cycle≤50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16180EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
FB1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Collector saturation voltage VCE(sat) **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 µA
FB1 SERIES
MIN.
300
300
135
7
7
TYP.
MAX.
100
0.3
0.3
10 13
10 13
Unit
nA
−
−
−
V
V
kΩ
kΩ
4 Data Sheet D16180EJ1V0DS
4페이지 [MEMO]
FB1 SERIES
Data Sheet D16180EJ1V0DS
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FB1J3P | on-chip resistor NPN silicon epitaxial transistor | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |