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PDF XP06531 Data sheet ( Hoja de datos )
| Número de pieza | XP06531 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Composite Transistors
XP06531
Silicon NPN epitaxial planer transistor
For high frequency amplification, oscillation, and mixing
■ Features
● High transition frequency fT.
● Small collector output capacitance Cob and reverse transfer ca-
pacitance Crb.
● Two elements incorporated into one package.
2.1±0.1
0.425 1.25±0.1 0.425
16
25
34
Unit: mm
■ Basic Part Number of Element
● 2SC3130 × 2 elements
■ Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
15
10
3
50
150
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: IB
Internal Connection
Tr1
1
6
25
34
Tr2
■ Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Common base reverse transfer capacitance
Collector to base parameter
VCEO
VEBO
ICBO
hFE
VCE(sat)
fT
Cob
Crb
rbb'·CC
hFE ratio
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = 0
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA
VCB = 4V, IE = –5mA, f = 200MHz
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 31.9MHz
VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA
min
10
3
110
typ max Unit
V
V
1 µA
400
0.5 V
1.9 GHz
1.4 pF
0.45 pF
11 ps
0.75 1.6
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet XP06531.PDF ] | |
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