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DIM400PBM17-A000 데이터시트 PDF




Dynex에서 제조한 전자 부품 DIM400PBM17-A000은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 DIM400PBM17-A000 기능
기능 IGBT Bi-Directional Switch Module
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DIM400PBM17-A000 데이터시트, 핀배열, 회로
Replaces DS5524-2.3
DIM400PBM17-A000
IGBT Bi-Directional Switch Module
DS5524-3 November 2010 (LN27710)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
KEY PARAMETERS
VDRM
VT*
IC
IC(PK)
(typ)
(max)
(max)
±1700V
4.9V
400A
800A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
Matrix Converters
Brushless Motor Controllers
Frequency Converters
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM400PBM17-A000 is a bi-directional switch
1700V, n-channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
10μs short circuit withstand. This device is optimised
for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
1(E1/E2)
2(C1)
5(E1)
4(G1)
3(C2)
6(G2)
7(E2)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400PBM17-A000
Note: When ordering, please use the complete part
number
Outline type code: P
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8




DIM400PBM17-A000 pdf, 반도체, 판매, 대치품
DIM400PBM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
RG(ON) = 4.7
RG(OFF) = 4.7
LS ~ 100nH
IF = 400A
VCE = 900V
dIF/dt = 3000A/μs
Min Typ. Max Units
1150
ns
100 ns
120 mJ
250 ns
250 ns
150 mJ
100 μC
230 A
70 mJ
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
RG(ON) = 4.7
RG(OFF) = 4.7
LS ~ 100nH
IF = 400A
VCE = 900V
dIF/dt = 2500A/μs
Min Typ. Max Units
1400
ns
130 ns
180 mJ
400 ns
250 ns
170 mJ
170 μC
270 A
100 mJ
4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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DIM400PBM17-A000 전자부품, 판매, 대치품
DIM400PBM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal Weight: 750g
Module Outline Type Code: P
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

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관련 데이터시트

부품번호상세설명 및 기능제조사
DIM400PBM17-A000

IGBT Bi-Directional Switch Module

Dynex
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