|
|
|
부품번호 | HCU6N70S 기능 |
|
|
기능 | 700V N-Channel Super Junction MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
June 2015
HCD6N70S / HCU6N70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
BVDSS = 700 V
RDS(on) typ ȍ
ID = 3.0 A
D-PAK I-PAK
2
1
3
HCD6N70S
1
2
3
HCU6N70S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
3.0
1.9
8.0
ρ20
25
0.9
0.1
50
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25)
- Derate above 25
2.1
28
0.22
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.4
50
110
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͦ͑͢͡
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Note :
1. VGS = 0 V
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101 is Limited by R DS(on)
10 Ps
100 Ps
1 ms
100 10 ms
100 ms
DC
10-1
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Note :
1. VGS = 10 V
2. ID = 1.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
3
2
1
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
D=0.5
100 0.2
0.1
0.05
* Notes :
1. ZTJC(t) = 4.4 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.02
10-1 0.01
10-5
PDM
single pulse
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͦ͑͢͡
4페이지 Package Dimension
{vTY\YhG
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͦ͑͢͡
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ HCU6N70S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HCU6N70S | 700V N-Channel Super Junction MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |