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PDF 2SD999 Data sheet ( Hoja de datos )
| Número de pieza | 2SD999 | |
| Descripción | NPN Transistor | |
| Fabricantes | Jin Yu Semiconductor | |
| Logotipo |  |
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2SD999
TRANSISTOR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage
z Mini Power Type Package
z Excellent DC Current Gain Linearity
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1)*
hFE(2)*
Collector-emitter saturation voltage
VCE(sat)*
Base-emitter saturation voltage
VBE(sat)*
Base -emitter voltage
VBE*
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE（1）
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=1V, IC=100mA
VCE=1V, IC=1A
IC=1A,IB=0.1A
IC=1A,IB=0.1A
VCE=6V, IC=10mA
VCE=6V,IC=10mA
VCB=6V, IE=0, f=1MHz
RANK
RANGE
MARKING
CM
90–180
CM
CL
135–270
CL
Min Typ
30
25
5
90
50
0.6
130
22
Max
0.1
0.1
400
0.4
1.2
0.7
CK
200–400
CK
Unit
V
V
V
µA
µA
V
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD999.PDF ] | |
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