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PDF BCX51 Data sheet ( Hoja de datos )
| Número de pieza | BCX51 | |
| Descripción | PNP Transistors | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
BCX51
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
Features
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
Power dissipation
PCM:
Collector current
ICM:
Collector-base voltage
V(BR)CBO:
0.5
-1
-45
W (Tamb=25oC)
A
V
Operating and storage junction temperature range
TJ, Tstg: -55oC to +150oC
SOT-89
4.4~4.6
1.4~1.8
1.4~1.6
0.36~0.56
1.5Ref.
2.9~3.1
0.32~0.52
0.35~0.44
Dimensision in Millimeter
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=-100µA, IE=0
IC= -1mA , IB=0
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
MIN MAX UNIT
-45 V
-45 V
-5 V
-0.1 µA
-0.1 µA
DC current gain
BCX51
BCX51-10
BCX51-16
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(ON)
VCE=-2V, IC=-150mA
VCE=-2V, IC=- 5mA
VCE=-2V, IC=- 500mA
IC=-500 mA, IB= -50mA
IC= -500 mA, VCE=-2V
63
63
100
63
40
250
160
250
-0.5
-1
V
V
fT
VCE= -5V, IC=-10mA
f = 100MHz
50
MHz
DEVICE MARKING
BCX51=AA BCX51-10=AC BCX51-16=AD
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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