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H7N0307AB 데이터시트 PDF




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부품번호 H7N0307AB 기능
기능 Silicon N Channel MOS FET
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H7N0307AB 데이터시트, 핀배열, 회로
H7N0307AB
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS (on) = 4.6 mtyp.
Low drive current
4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
123
G
D
S
REJ03G1120-0300
(Previous: ADE-208-1568A)
Rev.3.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 6




H7N0307AB pdf, 반도체, 판매, 대치품
H7N0307AB
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
ID = 2 A, 5 A, 10 A
12
VGS = 4.5 V
8
4
10 V
2 A, 5 A, 10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 60 A
40
VGS
20
16
30
VDS
20
VDD = 25 V
10 V 12
5V
8
10
VDD = 25 V
4
10 V
5V
00
0 20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
30
10 75°C
25°C
3
1
0.3 VDS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30 VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
100 td(off)
tr
50
td(on)
20
tf
10 VGS = 10 V, VDS = 10 V
Rg = 4.7 , duty 1 %
5
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 6

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H7N0307AB 전자부품, 판매, 대치품
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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