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PDF TSM9933DCS Data sheet ( Hoja de datos )
| Número de pieza | TSM9933DCS | |
| Descripción | -20V P-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
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TSM9933DCS
-20V P-Channel Power MOSFET
SOP-8
Pin Definition:
1. Source 1 8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2 6. Drain 2
4. Gate 2
5. Drain 2
Key Parameter Performance
Parameter
Value
VDS
VGS = -4.5V
-20
60
RDS(on) (max)
VGS = -2.7V
VGS = -2.5V
78
85
Qg 6
Unit
V
mΩ
nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Ordering Information
Part No.
Package
Packing
TSM9933DCS RL
SOP-8
2.5kps / 13’’ Reel
TSM9933DCS RLG
SOP-8
2.5kps / 13’’ Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Dual P-Channel MOSFET
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V.
Pulsed Drain Current, VGS @ 4.5V
Continuous Source Current (Diode Conduction) (Note 1,2)
Maximum Power Dissipation
TA=25oC
TA=70oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
RӨJC
RӨJA
Limit
-20
±12
-4.7
-20
-2.5
2
1.3
+150
- 55 to +150
Limit
30
62.5
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: D14
1 page  
TSM9933DCS
-20V P-Channel Power MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6 Version: D14
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM9933DCS.PDF ] | |
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