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부품번호 | MSK3020 기능 |
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기능 | H-BRIDGE MOSFET POWER MODULE | ||
제조업체 | MSK | ||
로고 | |||
M.S. KENNEDY CORP.
H-BRIDGE
MOSFET POWER MODULE
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
• Pin Compatible with MPM3002 and MPM3012
• P and N Channel MOSFETs for Ease of Drive
• N Channel Current Sensing MOSFET for Lossless Sensing
• Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
• Avalanche Rated Devices
• 100 Volt, 10 Amp Full H-Bridge
3020
(315) 701-6751
DESCRIPTION:
The MSK 3020 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3020 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom
transistors. The N Channel MOSFETS are current sensing to allow lossless current sensing for current controlled
applications. The MSK 3020 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high
performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3020 is pin
compatible with the MPM3002 and MPM3012 with some differences in specifications.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
• Stepper Motor Servo Control
• Disk Drive Head Control
• X-Y Table Control
• Az-El Antenna Control
PIN-OUT INFORMATION
1 Gate Q1
2 Source Q1
3 Drain 1, 2
4 Gate Q2
5 Sense Q2
6 Kelvin Source 2, 3
7 Source 2, 3
8 Sense Q3
9 Gate Q3
10 Drain 3, 4
11 Gate Q4
12 Source 4
1 Rev. C 7/10
APPLICATION NOTES, CONT.
USING CURRENT SENSING MOSFETS:
A MOSFET transistor is constructed of many individual MOSFET cells connected in parallel. They share the current total
very evenly. If one of these cells are brought out to a pin, that cell will pass an accurate proportional amount of the total
current. This current can be used as a low power sense of the whole current without passing that whole current through a
sensing device like a resistor. This small current multiplied by the ratio specified on the data sheet equals the whole current.
There are several methods of working with the sense function to obtain the actual current.
1. Virtual Earth Sensing
The disadvantage is amplifying a current swing of 10 amps in 100 nSec to produce a 5V output means the op amp has to
slew 50V/μSec. This is beyond the capabilities of a lot of op amps.
2. Resistor Sensing
The disadvantage is RT voltage must be above the offset voltage of the op amp and RT must be much less than RDS(ON) of
the sensing cell or temperature shifts will affect accuracy.
4 Rev. C 7/10
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구 성 | 총 6 페이지수 | ||
다운로드 | [ MSK3020.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MSK3020 | H-BRIDGE MOSFET POWER MODULE | MSK |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |