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PDF ISA1283AS1 Data sheet ( Hoja de datos )
| Número de pieza | ISA1283AS1 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Isahaya Electronics | |
| Logotipo |  |
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〈SMALL-SIGNAL TRANSISTOR〉
ISA1283AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1283AS1 is a silicon PNP epitaxial type transistor
designed for relay drive or power supply application.
Complementary with 2SC5482.
FEATURE
●High voltage VCEO=-60V
●High collector current. IC=-1A
●Low collector saturation voltage.
VCE(sat)=-0.11V typical (@IC=-500mA, IB=-25mA)
●High collector dissipation. PC=600mW
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
Unit：ｍｍ
APPLICATION
Audio equipment, VCR, relay drive, power supply, etc.
①②③
MAXI.MUM RATINGS（Ta=25℃）
Symbol
VCBO
VEBO
VCEO
IC
ICM
Pc
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-60
-6
-60
-1
-2
600
+150
-55～+150
Unit
V
V
V
A
A
mW
℃
℃
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
IC= -10μA , IE =0mA
IE= -10μA , IC =0mA
IC= -2mA , RBE= ∞
V CB= -50V , I E= 0mA
V EB= -4V , I C= 0mA
V CE = -4V , IC= -0.1A
I C= -500mA , I B= -25mA
V CE= -2V , I E= 10mA
V CB= -10V , I E= 0mA,f=1MHz
Limits
Min Typ Max
-60 -
-
-6 -
-
-60 -
-
- - -0.2
- - -0.2
55 - 300
- -0.11 -0.3
- 85 -
- 22 -
Unit
V
V
V
μA
μA
-
V
MHz
pF
※） It shows hFE classification in right table.
Item
hFE item
C
55～110
D
90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ISA1283AS1.PDF ] | |
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