|
|
Número de pieza | C5750 | |
Descripción | NPN SILICON RF TRANSISTOR | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de C5750 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5750
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
4-PIN SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package
ORDERING INFORMATION
Part Number
2SC5750
2SC5750-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9.0
6.0
2.0
50
200
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15656EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001
1 page OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
GP
20
VCE = 3.2 V
f = 0.9 GHz
ICq = 8 mA
250
200
15 150
10
5
0
–20
100
Pout
ηC
50
–15 –10
–5
IC
0
05
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 VCE = 2.8 V 250
f = 1.8 GHz
20
ICq = 8 mA
200
GP
15
150
10
Pout
5
100
ηC
50
0
–15 –10
–5
0
IC
0
5 10
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 VCE = 3.2 V 250
f = 2.4 GHz
20
ICq = 8 mA
200
15
GP
150
10
5
0
–15
100
Pout
ηC
50
–10 –5
0
5
Input Power Pin (dBm)
IC
0
10
2SC5750
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 VCE = 3.2 V 250
f = 1.8 GHz
20
ICq = 8 mA
200
GP
15
150
10
5
0
–15
100
Pout
ηC
50
–10 –5
0
IC
0
5 10
Input Power Pin (dBm)
Data Sheet P15656EJ1V0DS
5
5 Page 2SC5750
VCE = 3 V, IC = 10 mA, ZO = 50 Ω
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
S21
MAG.
ANG.
(deg.)
0.1
0.736
−26.3 24.160
161.1
0.2
0.679
−51.6 21.264
144.1
0.3
0.613
−73.4 18.533
130.1
0.4
0.560
−90.4 15.925
119.7
0.5
0.518
−105.3 13.847
111.1
0.6
0.489
−117.7 12.072
104.3
0.7
0.470 −128.5 10.714
98.3
0.8
0.454 −137.3
9.551
93.2
0.9
0.447 −145.8
8.674
88.5
1.0
0.441 −153.2
7.902
84.1
1.1
0.441 −159.9
7.264
80.2
1.2
0.440 −165.8
6.693
76.5
1.3
0.446 −171.6
6.237
72.8
1.4
0.447 −176.5
5.796
69.4
1.5
0.457
178.4
5.428
66.0
1.6
0.458
174.2
5.094
62.6
1.7
0.466
170.2
4.823
59.5
1.8
0.471
166.4
4.530
56.5
1.9
0.481
162.8
4.303
53.3
2.0
0.488
159.4
4.076
50.1
2.1
0.499
156.7
3.892
47.1
2.2
0.505
153.2
3.705
44.2
2.3
0.510
150.8
3.546
41.3
2.4
0.518
148.2
3.392
38.3
2.5
0.528
145.6
3.260
35.5
2.6
0.535
143.0
3.123
32.7
2.7
0.545
140.6
3.003
30.0
2.8
0.555
138.2
2.882
27.3
2.9
0.565
136.7
2.781
24.6
3.0
0.568
134.3
2.698
22.0
S12
MAG.
ANG.
(deg.)
0.013
0.025
0.033
0.038
0.042
0.045
0.047
0.049
0.051
73.2
63.4
55.1
50.5
46.1
43.2
42.3
41.4
40.9
0.053
0.055
0.058
0.060
0.062
0.064
0.067
0.069
0.071
0.074
41.1
40.8
41.3
41.2
41.4
41.7
41.8
41.6
41.8
41.5
0.077
0.079
0.082
0.085
0.087
0.090
0.093
0.096
0.099
0.102
41.7
41.9
41.8
41.7
41.8
41.4
41.0
40.7
40.3
39.9
0.105
39.3
S22
MAG.
ANG.
(deg.)
0.953
0.854
0.757
0.659
0.587
0.520
0.475
0.433
0.405
−15.3
−28.6
−38.4
−46.0
−51.3
−55.8
−59.1
−62.5
−65.4
0.378
0.362
0.344
0.335
0.320
0.315
0.303
0.300
0.291
0.292
−68.6
−71.3
−74.7
−77.5
−80.9
−83.9
−87.6
−91.3
−95.2
−99.6
0.286
0.292
0.290
0.298
0.298
0.307
0.308
0.316
0.320
0.329
−103.7
−108.3
−112.3
−116.6
−120.4
−124.4
−128.0
−132.1
−135.4
−139.1
0.329 −143.0
K MAG/MSG
(dB)
0.155
0.228
0.314
0.403
0.493
0.587
0.659
0.745
0.802
0.868
0.912
0.963
0.993
1.039
1.058
1.096
1.107
1.145
1.143
1.162
1.158
1.171
1.171
1.178
1.166
1.166
1.161
1.157
1.140
1.147
32.56
29.28
27.50
26.20
25.20
24.33
23.55
22.89
22.27
21.71
21.17
20.65
20.20
18.51
17.81
16.95
16.45
15.73
15.35
14.81
14.50
14.04
13.71
13.34
13.10
12.77
12.52
12.24
12.08
11.78
Data Sheet P15656EJ1V0DS
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet C5750.PDF ] |
Número de pieza | Descripción | Fabricantes |
C5750 | NPN SILICON RF TRANSISTOR | Renesas |
C5750X5R0J107M | Multilayer Ceramic Chip Capacitors | TDK |
C5750X5R1A107M | Multilayer Ceramic Chip Capacitors | TDK |
C5750X5R1A686M | Multilayer Ceramic Chip Capacitors | TDK |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |