|
|
|
부품번호 | S-L2SC4617RT1G 기능 |
|
|
기능 | General Purpose Transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2SC4617QT1G
S-L2SC4617QT1G
L2SC4617QT3G
S-L2SC4617QT3G
L2SC4617RT1G
S-L2SC4617RT1G
L2SC4617RT3G
S-L2SC4617RT3G
L2SC4617ST1G
S-L2SC4617ST1G
L2SC4617ST3G
S-L2SC4617ST3G
Marking
BQ
BQ
BR
BR
BS
BS
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
60
50
7
0.15
Unit
V
V
V
A
L2SC4617QT1G
Series
S-L2SC4617QT1G
Series
SC-89
COLLECTOR
3
1
BASE
2
EMITTER
Collector power
dissipation
PC 0.15 W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg −55~+150 ˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
60
50
7
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
180
2.0
Max.
−
−
−
0.1
0.1
0.5
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1 mA
IE=50µA
VCB=60V
VEB=7V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
!Device marking
(S-)L2SC4617QT1G=BQ (S-)L2SC4617RT1G=BR (S-)L2SC4617ST1G=BS
!hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
Rev.O 1/4
A
-X-
3
12
B -Y- S
K
G
2 PL
D 3 PL
0.08 (0.003) M X Y
MN
J
C
SC-89
LESHAN RADIO COMPANY, LTD.
L2SC4617QT1G
Series
S-L2SC4617QT1G
Series
-T-
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.50 1.60 1.70 0.059 0.063 0.067
B 0.75 0.85 0.95 0.030 0.034 0.040
C 0.60 0.70 0.80 0.024 0.028 0.031
D 0.23 0.28 0.33 0.009 0.011 0.013
G 0.50 BSC
0.020 BSC
H 0.53 REF
0.021 REF
J 0.10 0.15 0.20 0.004 0.006 0.008
K 0.30 0.40 0.50 0.012 0.016 0.020
L 1.10 REF
0.043 REF
M −−− −−− 10 _ −−− −−− 10 _
N −−− −−− 10 _ −−− −−− 10 _
S 1.50 1.60 1.70 0.059 0.063 0.067
HH
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 4/4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ S-L2SC4617RT1G.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
S-L2SC4617RT1G | General Purpose Transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |