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부품번호 V8P10 기능
기능 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V8P10 데이터시트, 핀배열, 회로
New Product
V8P10
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.466 V at IF = 4 A
TMBS® eSMP® Series
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K • Trench MOS Schottky technology
• Low forward volatge drop, low power losses
1 • High efficiency operation
2 • Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
VRRM
100 V
IFSM
150 A
EAS 100 mJ
VF at IF = 8 A
0.582 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
EAS
IRRM
TJ, TSTG
V8P10
V810
100
8.0
150
100
1.0
- 40 to + 150
UNIT
V
A
A
mJ
A
°C
Document Number: 89005 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




V8P10 pdf, 반도체, 판매, 대치품
V8P10
Vishay General Semiconductor
New Product
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.030 (0.75) NOM.
0.268
(6.80)
Conform to JEDEC TO-277A
0.041
(1.04)
0.186 (4.72)
MIN.
0.050 (1.27)
MIN.
0.055 (1.40)
MIN.
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 89005
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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