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Número de pieza | AOU7S60 | |
Descripción | Power Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOU7S60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! AOD7S60/AOU7S60
600V 7A α MOS TM Power Transistor
General Description
Product Summary
The AOD7S60 & AOU7S60 have been fabricated using
the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
33A
0.6Ω
8.2nC
1.9µJ
TO252
DPAK
Top View
Bottom View
D
D
TO251
Top View
Bottom View
S
G
AOD7S60
G
S
S
D
G
AOU7S60
S DG
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds K
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Maximum
600
±30
7
5
33
1.7
43
86
83
0.7
100
20
-55 to 150
300
Typical
45
--
1.2
Maximum
55
0.5
1.5
D
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Aug 2011
www.aosmd.com
Page 1 of 7
1 page AOD7S60/AOU7S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
80
60
40
20
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Avalanche energy
8
6
4
2
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 15: Current De-rating (Note B)
Rev0: Aug 2011
www.aosmd.com
Page 5 of 7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AOU7S60.PDF ] |
Número de pieza | Descripción | Fabricantes |
AOU7S60 | Power Transistor | Alpha & Omega Semiconductors |
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