|
|
Datasheet 1SS184 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1SS184 | SILICON EPITAXIAL PLANAR DIODE Certificate TH97/10561QM
Certificate TW00/17276EM
1SS184
PRV : 85 Volts Io : 100 mA
FEATURES :
* Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free
SILICON EPITAXIAL PLANAR DIODE SOT-23
0.19 0.08
1 |  EIC | diode |
| 2 | 1SS184 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS184 Switching Diode
FEATURES y Low forward voltage y Fast reverse recovery time
MARKING: B3
B3 B3
SOT-23
1 3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃
Pa |  JCET | diode |
| 3 | 1SS184 | DIODE RoHS
1SS184 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Reverse Voltage
VR : 80V
OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC
1
1.
2.4 1.3
SOT-23
3
2
ONIC CMarking:B3
2.9 |  WEJ | diode |
| 4 | 1SS184 | Surface Mount Switching Diodes Surface Mount Switching Diodes
P b Lead(Pb)-Free
Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications
Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Me |  WEITRON | diode |
| 5 | 1SS184 | Ultra High Speed Switching Diode WILLAS
Ultra High Speed Switching
Application
1SS184
Featrues Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) We declare that the material of product
compliance with RoHS requirements. RoHS product for packing |  WILLAS | diode |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1SS104 | SILICON PLANAR TYPE DIODE Toshiba Semiconductor diode | | |
| 2 | 1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction T  SEMTECH diode | | |
| 3 | 1SS106 | Silicon Schottky Barrier Diode 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal..
Ordering Information
Type No. 1S  Renesas diode | | |
| 4 | 1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi  JINAN JINGHENG ELECTRONICS diode | | |
| 5 | 1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band Wh  Hitachi Semiconductor diode | | |
| 6 | 1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Hitachi Semiconductor diode | | |
| 7 | 1SS110 | Silicon Epitaxial Planar Diode for Tuner Band Switch 1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
T Hitachi Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1SS184. Si pulsa el resultado de búsqueda de 1SS184 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |