(PDF) BAS116LT1 Datasheet

Número de pieza	BAS116LT1
Descripción	DIODE
Fabricantes	WEJ
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No Preview Available ! RoHS BAS116LT1 SURFACE MOUNT SWITCHING DIODE • Low Leakage Current Applications • Medium Speed Switching Times Package:SOT-23 DABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating TNon-Repetitive Peak Reverse Voltage VRM 100 .,LPeak Repetitive Reverse Voltage working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 OPeak Forward Current IF 200 Forward CCurrent(Note) Continuous IFM 300 Power Dissipation Derate Above 25 (Note) PD 300 2.4 ICJunction Temperature Tj 150 Storage Temperature Tstg -50-150 NNote:Diode Ceramic Substrate 10mm 8.0mm 0.7mm Unit V V mAdc mAdc mW mW/ OELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Max Unit Test Conditions TRForward Voltage 0.9 V IF=1.0mA 1.0 V IF=10mA VF 1.1 V IF=50mA 1.25 V IF=150mA CReverse Breakdown Voltage V (BR) 75 — Vdc I BR = 100 uAdc EReverse Voltage Leakage Current LCapacitance 5.0 IR 80 Cj 2.0 EReverse Recovery Time Trr 3.0 Note:Diode On Ceramic Substrate 10mm 8.0mm 0.7mm JDEVICE MARKING: WEBAS116LT1=JV uA VR=75V nA VR=75V Tj=150 PF VR=0 f=1.0MHz uS IF=10mA to IR=10mA WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 1 page

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PDF BAS116LT1 Data sheet ( Hoja de datos )