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PDF SSD30N15-60D Data sheet ( Hoja de datos )
| Número de pieza | SSD30N15-60D | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSD30N15-60D
22A , 150V , RDS(ON) 69mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFET utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TO-252
saves board space
Fast switching speed
High performance trench technology
TO-252(D-Pack)
A
B
GE
C
D
APPLICATION
DC-DC converters and power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.80 J 2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 150
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
TC=25°C
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
TC=25°C
VGS
ID
IDM
IS
PD
±20
22
60
51
50
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~175
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
RθJA
40
Maximum Thermal Resistance Junction-Case
Note:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
RθJC
3
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
16-Apr-2013 Rev. A
Any changes of specification will not be informed individually.
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