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PDF SSD50N06-15D Data sheet ( Hoja de datos )

Número de pieza SSD50N06-15D
Descripción N-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SSD50N06-15D
N-Ch Enhancement Mode Power MOSFET
51A, 60V, RDS(ON) 13 m
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density
process. Low RDS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are PWM DC-DC converters, power management in portable
and battery-powered products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
FEATURES
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TO-252 Surface Mount Package Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter applications
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

Drain

Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation @TC=25°C 1
VDS
VGS
ID
IDM
IS
PD
60
±20
51
200
51
50
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient 1
RθJA
40
Maximum Thermal Resistance Junction-Case
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJC
3

Source
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
07-Feb-2014 Rev. C
Any changes of specification will not be informed individually.
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