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PDF SSD95N03 Data sheet ( Hoja de datos )
| Número de pieza | SSD95N03 | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSD95N03
96A , 30V , RDS(ON) 4mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD95N03 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(ON) and gate charge for most of the synchronous
buck converter applications .
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
MARKING
95N03
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.80 J 2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current 1
Pulsed Drain Current 2
Total Power Dissipation 4
VGS=10V, TC=25°C
VGS=10V,TC=100°C
TC=25°C
ID
IDM
PD
96
88
192
62.5
Linear Derating Factor
Single Pulse Avalanche Energy 3
0.42
EAS 317
Single Pulse Avalanche Current
IAS 53.8
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~175
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
Maximum Thermal Resistance Junction-Case 1
RθJA
RθJC
62
2.4
3
Source
Unit
V
V
A
A
A
W
W / °C
mJ
A
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
24-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
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| PDF Descargar | [ Datasheet SSD95N03.PDF ] | |
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