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Número de pieza | MBRF10H200CT | |
Descripción | Dual Common Cathode Schottky Rectifier | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBRF10H200CT (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MBRF10H100CT thru MBRF10H200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
ITO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRF
10H100CT
MBRF
10H150CT
MBRF
10H200CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
100
150
200
VRMS
70
105 140
Maximum DC blocking voltage
VDC 100 150 200
Maximum average forward rectified current
IF(AV)
10
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF= 5 A, TJ=25℃
IF= 5 A, TJ=125℃
IF= 10 A, TJ=25℃
IF= 10 A, TJ=125℃
IFSM
IRRM
VF
120
1
0.5
0.85 0.88
0.75 0.75
0.95 0.97
0.85 0.85
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJC
TJ
TSTG
5
1
10000
3.5
- 55 to +175
- 55 to +175
UNIT
V
V
V
A
A
A
A
V
μA
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1309015
Version: H13
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MBRF10H200CT.PDF ] |
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