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UGB8BT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 UGB8BT
기능 Superfast Efficient Rectifiers - Single Diode
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UGB8BT 데이터시트, 핀배열, 회로
UGB8AT ... UGB8JT
UGB8AT ... UGB8JT
Superfast Efficient Rectifiers – Single Diode
Superschnelle Hocheffizienz-Gleichrichter – Einzeldiode
Version 2012-10-09
1.2
4.5 ±0.2
10.25 ±0.5
4
Type
Typ
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
123
1.3
0.8
0.4 5.08
4
K
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
123
Dimensions - Maße [mm]
Standard packaging in tubes
Standard Lieferform in Stangen
8A
50...600 V
TO-263AB
D2 PAK (D2)
1.6 g
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
UGB8AT
UGB8BT
UGB8DT
UGB8GT
UGB8JT
50
100
200
400
600
50
100
200
400
600
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 8 A
< 0.9
< 1.0
< 0.9
< 1.0
< 0.9
< 1.0
< 1.15
< 1.25
< 1.6
< 1.75
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 100°C
IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj
TS
8A
22 A 2)
112/125 A
62 A2s
-50...+150°C
-50...+175°C
1 Tj = 25°C
2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
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http://www.diotec.com/
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UGB8BT

Superfast Efficient Rectifiers - Single Diode

Diotec
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UGB8BT

ULTRAFAST EFFICIENT PLASTIC RECTIFIER

General Semiconductor
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