Datasheet.kr   

VNH7013XP-E 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 VNH7013XP-E은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 VNH7013XP-E 자료 제공

부품번호 VNH7013XP-E 기능
기능 Automotive integrated H-bridge
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


VNH7013XP-E 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 24 페이지수

미리보기를 사용할 수 없습니다

VNH7013XP-E 데이터시트, 핀배열, 회로
VNH7013XP-E
Automotive integrated H-bridge
Features
Type
RDS(on)
Iout Vccmax
VNH7013XP-E
13 mΩ typ
(per leg)
40 A 72 V(1)
1. Per leg: sum of the two BVdss (HSD + LSD);
VCC > 36 V whole bridge must be switched off;
Maximum VCC voltage: 72 V
10 V compatible inputs
RDS(on) per leg: 13 mΩ typical
Embedded thermal sensor: -8.1 mV/°K
Very low stray inductance in power line
Description
The VNH7013XP-E is an automotive integrated
H-bridge intended for a wide range of automotive
applications driving DC motors. The device
incorporates a dual channel and two single
channel MOSFETs. All the devices are designed
using STMicroelectronics® well known and
proven proprietary VIPower® M0-S7 technology
that allows to integrate in a package four different
channels in H-bridge topology.
This package, specifically designed for the harsh
automotive environment offers improved thermal
performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design
allows superior manufacturability at board level.
PowerSSO-36 TP
Table 1. Device summary
Package
PowerSSO-36 TP
Tube
VNH7013XP-E
Order codes
Tape and reel
VNH7013XPTR-E
January 2012
Doc ID 022370 Rev 3
1/24
www.st.com
1




VNH7013XP-E pdf, 반도체, 판매, 대치품
List of figures
List of figures
VNH7013XP-E
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Single pulse maximum current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Gate charge vs gate-source voltage HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Gate charge vs gate-source voltage LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Capacitance variations HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Capacitance variations LS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal sensor voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Gate charge test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 13
Switching times test circuit for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PowerSSO-36 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . 16
PowerSSO-36 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18
PowerSSO-36 LSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18
Thermal fitting model of an H-bridge in PowerSSO-36. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PowerSSO-36 TP package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PowerSSO-36 TP tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
PowerSSO-36 TP tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4/24 Doc ID 022370 Rev 3

4페이지










VNH7013XP-E 전자부품, 판매, 대치품
VNH7013XP-E
2 Electrical specifications
2.1
Absolute maximum rating
Table 3. Absolute maximum rating
Symbol
Parameter
VCC Supply voltage (whole bridge switched off)
Imax Maximum output current (continuous)
VGS_max Maximum gate source voltage
IPulse_max Maximum Single Pulse output current
Tj Junction operating temperature
Tc Case operating temperature
TSTG
Storage temperature
IS Diode continuous forward current
1. Pulse duration = 20 ms (seeFigure 3).
Figure 3. Single pulse maximum current
Electrical specifications
Value
72
40
18
80(1)
175
-40 to 150
-55 to 150
40
Unit
V
A
V
A
°C
°C
°C
A
Doc ID 022370 Rev 3
7/24

7페이지


구       성 총 24 페이지수
다운로드[ VNH7013XP-E.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
VNH7013XP-E

Automotive integrated H-bridge

STMicroelectronics
STMicroelectronics

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵