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PDF FZT657 Data sheet ( Hoja de datos )
| Número de pieza | FZT657 | |
| Descripción | NPN Silicon Planar Medium Power Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN Silicon Planar Medium Power Transistor
FZT657
Features
Low saturation voltage
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50+0.2
-0.2
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
123
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
Rating
300
300
5
1
0.5
2
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
Transition Frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
fT
Cobo
Testconditons
IC=100ìA
IC=10mA*
IE=100ìA
VCB=200V
VEB=3V
IC=100mA, IB=10mA*
IC=100mA, IB=10mA*
IC=100mA, VCE =5V*
IC=10mA, VCE =5V*
IC=100mA, VCE =5V*
IC=10mA, VCE =20V,f=20MHz
VCB =20V, f=1MHz
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT657
Min Typ. Max Unit
300 V
300 V
5V
0.1 ìA
0.1 ìA
0.5 V
1.0 V
1.0 V
40
50
30 MHz
20 pF
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