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부품번호 | STU36L01A 기능 |
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기능 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
제조업체 | SamHop Microelectronics | ||
로고 | |||
Gr
Pr
STU/D36L01A
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V
36A
17 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
36
30
105
256
54
38
-55 to 175
2.8
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Mar,05,2012
www.samhop.com.tw
STU/D36L01A
60
ID=18A
50
40 125 C
30 75 C
20 25 C
10
0
02 4
6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4500
3750
3000
Ciss
2250
1500
750
Crss
Coss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
25 C
10.0
5.0
125 C
75 C
1.0
0
0.2 0.4 0.6 0.8 1.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8 ID=18A
6
4
2
0
0 7 14 21 28 35 42 49 56
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
500
100
10
TD(off)
Tf
Tr TD(on)
100
100us 10us
10 DC10ms 1ms
VDS=50V,ID=1A
VGS=10V
1
1
10
Rg, Gate Resistance(Ω)
100
Figure 11. switching characteristics
1 VGS=10V
Single Pulse
TC = 25 C
0.3
0.1
1
10 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Mar,05,2012
4 www.samhop.com.tw
4페이지 STU/D36L01A
Ver 1.0
E
b2
L3
D1
1
L4
e
E1 D
23
b1
b
1
DETAIL "A"
A
C
TO-252
H
L2
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
L A1
L1 DETAIL "A"
MILLIMETERS
MIN MAX
2.184
2.388
0.000
0.633
0.127
0.889
0.666
1.092
5.207
5.461
0.460
0.584
5.969
6.223
5.415
5.515
6.400
4.902
6.731
5.004
2.286
BSC
9.601
10.286
1.313
1.651
2.666
0.460
0.889
0.508
0°
7°
3.174
0.560
1.143
1.016
8°
REF.
INCHES
MIN MAX
0.086
0.094
0.000
0.005
0.025
0.035
0.026
0.043
0.205
0.018
0.215
0.023
0.235
0.245
0.213
0.252
0.193
0.217
0.265
0.197
0.090
0.378
BSC
0.405
0.052
0.105
0.065
0.125
0.018
0.035
0.020
0°
7°
0.022
0.045
0.040
8°
REF.
Mar,05,2012
7 www.samhop.com.tw
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
STU36L01A | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |