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부품번호 | HFU630 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
Dec 2012
HFD630 / HFU630
200V N-Channel MOSFET
BVDSS = 200 V
RDS(on) typ ȍ
ID = 7.2 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 22 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD630
1
2
3
HFU630
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
200
7.2
4.6
28.8
ρ30
160
7.2
4.6
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ఁ) *
Power Dissipation (TC = 25ഒ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
46
0.37
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.7
50
110
Units
ഒ:
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͣ͑͢͡
Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
10 Ps
100 Ps
1 ms
10 ms
100 ms
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
0.1
0.05
* Notes :
1. ZTJC(t) = 2.7 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
10-1 0.02
0.01
10-2
10-5
single pulse
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͣ͑͢͡
4페이지 Package Dimension
{vTY\YG
6.6±0.2
5.35±0.15
2.3±0.1
0.5±0.05
0.8±0.2
0.6±0.2
2.3typ
2.3typ
1.2±0.3
0.05+-00..015
0.5+-00..015
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͣ͑͢͡
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
HFU630 | N-Channel MOSFET | SemiHow |
HFU630A | 200V N-Channel MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |