|
|
|
부품번호 | HFP50N06GC 기능 |
|
|
기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
Dec 2014
HFP50N06GC
60V N-Channel MOSFET
BVDSS = 60 V
RDS(on) typ Pȍ
ID = 50 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
60
50
35
200
ρ20
525
50
12
120
0.8
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͥ͑͢͡
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
* Note :
1. V = 0 V
GS
2. ID = 250 PA
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
103
Operation in This Area
is Limited by R DS(on)
100 Ps
102
1 ms
10 ms
100 ms
101 DC
100
10-1
* Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100 101
VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. V = 10 V
GS
2. ID = 25 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature [oc]
Figure 10. Maximum Drain Current
vs Case Temperature
175
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
* Notes :
1. ZTJC(t) = 1.25 oC/W Max.
2. Duty Factor, D=t1/t2
3.
T
JM
-
T
C
=
P
DM
*
ZTJC(t)
PDM
single pulse
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͥ͑͢͡
4페이지 Package Dimension
{vTYYWGOhPG
9.90±0.20
ij±0.20
4.50±0.20
1.30±0.20
1.27±0.20
1.52±0.20
2.54typ
2.54typ
2.40±0.20
0.80±0.20
0.50±0.20
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͥ͑͢͡
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HFP50N06GC.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HFP50N06GC | N-Channel MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |